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| SD1731-14 (ST448) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .OPTI .30 .50 .EFFI .COMMON .GOLDMETALLI .P PRELIMINARY DATA MIZED FOR SSB MHz VOLTS CIENCY 40% EMITTER Z ATION OUT = 250 W PEP WITH 12 dB GAIN .50 0 4LF L (M17 4 ) epoxy sealed O R DE R CODE SD1731-14 BRANDING ST448 PIN CONNECTION DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Un it 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation (Theatsink 25C) Junction Temperature Storage Temperature 110 55 4.0 20 257 +200 - 65 to +150 V V V A W C C THERMAL DATA RTH(j-c) RTH(c-s) S e pte m ber 6, 1 99 6 Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 0.48 0.2 C/W C/W SD1731-14 (ST448) ELECTRICAL SPECIFICATIONS STATIC (Tcase = 25C) S ym bo l Te s t C o n ditio n s Va lu e Min. Typ . Ma x. Un it BVCBO BVCEO BVEBO ICEO ICES hFE IC = 2 00 mA IC = 2 00 mA IE = 2 0 mA VC E = 30 V VC E = 55 V VC E = 6 V IE = 0 mA IB = 0 mA IC = 0 mA IB = 0 mA VBE = 0V IC = 1 0 A 110 55 4.0 -- -- 5 -- -- -- -- -- -- -- -- -- 5 10 20 V V V mA mA -- DYNAMIC (Theatsink = 25C) S ym bo l Te s t C o nd itio ns Va lu e Min. Typ. Ma x. Un it POUT GP * IMD* c* COB Note: *f 1 f = 3 0 MHz P OUT = 250 W P E P P OUT = 250 W P E P P OUT = 250 W P E P f = 1 MHz = 30.00 MHz, f2 VCC = 50 V VCC = 50 V VCC = 50 V VCC = 50 V VCB = 5 0 V = 30.001 MHz ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA 250 12 -- 40 -- -- -- -- 45 270 -- -- -30 -- -- W dB dBc % pf 2/5 SD1731-14 (ST448) TEST CIRCUIT C1 C2 C3 : : : C4 : T1 : 6:3.5 Impedance Transformer on toriod Phillips C5 : 4C6 97180 C6 : T2 : Twisted Pair 4:1 Transformer, 4 Turns Made with C7, C8, C9, 1.0mm Enameled on toriod Phillips 4C6 97180 C10, C11 :1nF + 10nF + 100nF + 4.7F, 63V + 100F, 63V T3 : Feedback Transformer Primary: 2 Turns of 1mm Enameled Wire L1 : 3 Turns of 1.2mm Unenameled Wire Diameter, Secondary: 8 Turns of 1mm Enameled Wire 7.1mm, Length 13mm L2, L3 :8 Turns of 0.55mm Enameled Wire on Ferrite Core T4 : Twisted Pair 4:1 Transformer, 4 Turns of bifilar Twisted 1.2mm Wires on Ferrite Core Phillips 4C6 97200 Phillips 4C6 97170 (9 x 6 x 3) Arco 426 + 220pF + 330pF Chips 2 x 10nF Chips Arco 4615 + 2.2nF + 2 x 1nF LCC + 4.7nF + 560pf Chps Arco 4213 + 330pF Chip 10nF Chip 3 x 10nF Chips L4 : 10 Turns of 1.2mm Enameled Wire, Diameter 8.1mm, Length 20mm L5 : 7 Turns of 1.2mm Enameled Wire on Ferrite Core Phillips 4C6 97180 3/5 SD1731-14 (ST448) MOUNTING CIRCUIT BIAS CIRCUIT 4/5 SD1731-14 (ST448) PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0174 UDCS No. 1011000 r ev. C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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